| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric film generating no crack, reducing the shrinkage of the film, and having excellent dielectric characteristics in the formation of a high dielectric film composed of a perovskite dielectric substance by an MOD method, and to provide a method for forming the dielectric film. <P>SOLUTION: Three layers or more of laminated multilayer dielectric thin-films are manufactured by repeating the following processes (1) and (2) on a substrate, and this baking is conducted to the obtained multilayer dielectric thin-films. In the process (1), the upper section of the substrate is coated with a coating fluid composed of a coating composition containing an alkaline earth metal element, and at least one kind of a metallic element selected from a group consisting of titanium, tin and zirconium in a mixed solvent by a sufficient quantity, so that the film thickness of the dielectric thin film formed by a coating at one time is formed in 30 to 120 nm after a temporary baking, and dried. In the process (2), the dielectric thin film formed on the substrate is heated at a temperature of 550 to 800°C in an oxygen atmosphere, and baked temporarily. <P>COPYRIGHT: (C)2008,JPO&INPIT |
