发明名称 Non-volatile semiconductor memory
摘要 When an address storing/comparing circuit stores no address identical to an external input address in read operation, in a main memory read data is written back to a data storing area after data read therefrom, and data indicating a sum of a predetermined value and a value of the read data is written to a history storing area after data read therefrom. In a sub memory, after data read from a history storing area, data read from the data storing area of the main memory is written to a data storing area and the data indicating the sum of the predetermined value and the value of the data read from the history storing area of the main memory is written to the history storing area, when the value of the data read from the history storing area of the main memory is larger than that of the sub memory.
申请公布号 US2008043512(A1) 申请公布日期 2008.02.21
申请号 US20060645537 申请日期 2006.12.27
申请人 FUJITSU LIMITED 发明人 FUKUSHI ISAO
分类号 G11C11/22 主分类号 G11C11/22
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