| 摘要 |
PROBLEM TO BE SOLVED: To provide: a sputtering source which has a rotary cylindrical target and with which the film thickness of a thin film can be controlled with a good precision; a sputtering film deposition apparatus equipped with the sputtering source; and a sputtering film deposition method using the sputtering film deposition apparatus. SOLUTION: In the sputtering source equipped with the rotary cylindrical target 2 in a sputtering chamber 1, a shield 4 is provided in the sputtering chamber so that a pace 5 is formed between the shield 4 and the rotary cylindrical target 2 and the sputtering chamber 1 is partitioned into an area 1a on a side receiving the impact of sputtering gas ion of the target 2 and an area 1b on a side not receiving the impact of the sputtering gas ion by the shield 4, and sputtering is performed by introducing a sputtering gas from the area 1b to the area 1a through the space 5. COPYRIGHT: (C)2008,JPO&INPIT
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