PREPARATION OF P-ZNO FILM BY PLASMA ENHANCED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

A method for forming a p-type zinc oxide layer using plasma enhanced metal organic chemical vapor deposition is provided to adjust a doping concentration by controlling a dose of an organic metal compound of a group-V element. After a substrate(20) is put in a reactor(10) and then an oxygen source and an argon gas are inputted to the reactor, an RF power is applied to the reactor to produce a plasma in the reactor. A zinc precursor and a group-V precursor as a dopant are inputted to the reactor to form a p-type zinc oxide layer on the substrate. The heat treatment is performed on a substrate with the p-type zinc oxide layer. When the p-type zinc oxide layer is formed, a temperature of the substrate is in the range of 200 to 400 degrees centigrade.