发明名称 INFORMATION RECORDING MEDIUM, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET
摘要 <p>This invention provides an information recording medium which, even when the thickness of a recording layer is very small and is about 3 nm, can realize a high recording sensitivity in information recording and has good erasing properties. In an information recording medium (15) which can record information by the application of light or electric energy, at least a recording layer (104) which causes a phase change is provided. The recording layer (104) contains a combination of at least one element selected from Zn, Si and C with Sb in a total amount of not less than 85 atomic% and preferably has a composition represented by a compositional formula Sb<SUB>100-a1</SUB>M1<SUB>a1</SUB>(atomic%) wherein M1 represents at least one element selected from Zn, Si and C; al represents a composition ratio in terms of atomic%; and 0 < a1 = 50.</p>
申请公布号 WO2008018225(A1) 申请公布日期 2008.02.14
申请号 WO2007JP61346 申请日期 2007.06.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NISHIHARA, TAKASHI;KOJIMA, RIE;YAMADA, NOBORU;MATSUNAGA, TOSHIYUKI 发明人 NISHIHARA, TAKASHI;KOJIMA, RIE;YAMADA, NOBORU;MATSUNAGA, TOSHIYUKI
分类号 B41M5/26;G11B7/24;G11B7/243;G11B7/253;G11B7/254;G11B7/257;G11B7/258;G11B7/26 主分类号 B41M5/26
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