发明名称 |
INFORMATION RECORDING MEDIUM, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET |
摘要 |
<p>This invention provides an information recording medium which, even when the thickness of a recording layer is very small and is about 3 nm, can realize a high recording sensitivity in information recording and has good erasing properties. In an information recording medium (15) which can record information by the application of light or electric energy, at least a recording layer (104) which causes a phase change is provided. The recording layer (104) contains a combination of at least one element selected from Zn, Si and C with Sb in a total amount of not less than 85 atomic% and preferably has a composition represented by a compositional formula Sb<SUB>100-a1</SUB>M1<SUB>a1</SUB>(atomic%) wherein M1 represents at least one element selected from Zn, Si and C; al represents a composition ratio in terms of atomic%; and 0 < a1 = 50.</p> |
申请公布号 |
WO2008018225(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
WO2007JP61346 |
申请日期 |
2007.06.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NISHIHARA, TAKASHI;KOJIMA, RIE;YAMADA, NOBORU;MATSUNAGA, TOSHIYUKI |
发明人 |
NISHIHARA, TAKASHI;KOJIMA, RIE;YAMADA, NOBORU;MATSUNAGA, TOSHIYUKI |
分类号 |
B41M5/26;G11B7/24;G11B7/243;G11B7/253;G11B7/254;G11B7/257;G11B7/258;G11B7/26 |
主分类号 |
B41M5/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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