| 摘要 |
The method for fabricating a semiconductor device comprises the step of forming a Co film 72 on a gate electrode 30 having a gate length L<SUB>g </SUB>of below 50 nm including 50 nm; the first thermal processing step of making thermal processing to react the Co film 72 and the gate electrode 30 with each other to form a CoSi film 76 a on the upper part of the gate electrode 30 ; the step of selectively etching off the unreacted part of the Co film 72 ; and the second thermal processing step of making thermal processing to react the CoSi film 76 a and the gate electrode 30 with each other to form a CoSi<SUB>2 </SUB>film 42 a on the upper part of the gate electrode 30 , wherein in the first thermal processing step, the CoSi film 76 a is formed so that the ratio h/w of the height h of the CoSi film 76 a to the width w of the CoSi film 76 a is below 0.7 including 0.7.
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