| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of applying a Joule heat used for the phase change of a phase-change material to the phase-change material more efficiently, and a manufacturing method for easily manufacturing the semiconductor storage device. <P>SOLUTION: A phase-change material layer 61 in a phase-change memory 1 has an upper electrode 62, and a heater electrode 43 fitted so as to be opposed to a part of the upper electrode 62in the laminating direction. The phase-change material layer 61 further has a recess 63 with a bottom 65 fitted between the upper electrode 62 and the heater electrode 43 in the laminating direction, and brought into contact with the heater electrode 43; and a wall 66 extended from the outer periphery of the bottom 65, and brought into contact with the upper electrode 62; and a contact 64 brought into contact with the upper electrode 62 and extended from the wal lsection 66. The phase change memory 1 has the phase-change material layer 61 and a heat-insulating layer 56 provided between the recess 63 and the upper electrode 62. <P>COPYRIGHT: (C)2008,JPO&INPIT |
