| 摘要 |
<p>Disclosed is a polishing liquid for CMP which enables to continuously polish a barrier layer, a wiring metal layer and an interlayer insulating film, while suppressing formation of a hollow due to excessive polishing of the interlayer insulating film near the wiring metal layer. Specifically disclosed is a polishing liquid for CMP, which contains abrasive grains, an acid, a tolyltriazole compound represented by the general formula (I) below and water. (In the formula (I), R<SUP>1</SUP>s independently represent an alkylene group having 1-4 carbon atoms, and R<SUP>2</SUP> represents an alkylene group having 1-4 carbon atoms.)</p> |
