| 摘要 |
A method for manufacturing a semiconductor device is provided to decrease a turn-on resistance of the semiconductor device by forming a gate insulation film with a uniform thickness on a hetero semiconductor region. A hetero semiconductor region is formed on a semiconductor substrate(1,2), such that a hetero junction is formed between the hetero semiconductor region(3) and a semiconductor substrate. The hetero semiconductor region is formed of a semiconductor material having a band gap, which is different from that of the semiconductor substrate. A portion of the hetero semiconductor region includes a thickness control unit, which is thinner than other regions. The hetero semiconductor region is arranged to have the same thickness, while the thickness control unit is oxidized, such that a gate insulation film(4) is formed to be close to the hetero junction. A gate electrode(5) is formed on the gate insulation film.
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