Reducing contamination of silicon substrate during metallizing process for the production of metallization layers of semiconductor device by selectively forming a support layer and structuring dielectric layer pile by an anisotropic etching

摘要

The reduction of contamination of silicon substrate (100) during metallizing process for the production of metallization layers of semiconductor device such as application specific integrated circuit and static random access memory, comprises selectively forming a support layer over beveling edge (105) of the substrate, forming a dielectric layer pile for a metallization layer of a semiconductor element over the substrate, and structuring the dielectric layer pile by an anisotropic etching process by selectively changing adhering characteristics of the support layer. The reduction of contamination of silicon substrate (100) during metallizing process for the production of metallization layers of semiconductor device such as application specific integrated circuit and static random access memory, comprises selectively forming a support layer over beveling edge (105) of the substrate, forming a dielectric layer pile for a metallization layer of a semiconductor element over the substrate, and structuring the dielectric layer pile by an anisotropic etching process by selectively changing adhering characteristics of the support layer in an area of the beveling edge with increased surface area in regard to a polymer sort that is used in the structuring of the dielectric layer pile. The substrate has a central zone (104) adjoining to the beveling edge to receive a circuit element of an integrated circuit. The support layer has a surface having different adhesive characteristics related to corrosive dependent polymer materials in comparison to the upper surface of the beveling edge. The selective formation of the support layer comprises selectively supplying a material of the support layer on the substrate in a condition of slight viscosity, hardening the material to form the support layer, separating the support layer over the central zone and the beveling edge, removing the support layer from the central zone, forming a mask layer over the support layer, etching the mask layer to expose the support layer in the central zone while a part of the mask layer is retained in the beveling edge, removing an exposed area of the support layer and the area of the mask layer in a joint etching process in such a way that the area of the support layer is conserved in the beveling edge, and forming a surface topography in the surface of the beveling edge by the formation of the support layer to enlarge a boundary area between the support layer and the surface of the beveling edge. The formation of surface topography comprises forming grooves in the beveling edge. The adhering characteristics of the support layer are changed by forming the support layer with a reduced affinity for fluorine containing polymer material.