发明名称 |
Lanthanide oxide / hafnium oxide dielectric layers |
摘要 |
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more monolayers and a lanthanide oxide layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO<SUB>2</SUB>. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.
|
申请公布号 |
US7312494(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20040931343 |
申请日期 |
2004.08.31 |
申请人 |
|
发明人 |
|
分类号 |
H01L27/108;C23C14/08;C23C16/40;C23C16/455;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8242;H01L29/49;H01L29/51;H01L29/76;H01L29/78;H01L29/786;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|