发明名称 Lanthanide oxide / hafnium oxide dielectric layers
摘要 Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more monolayers and a lanthanide oxide layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO<SUB>2</SUB>. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.
申请公布号 US7312494(B2) 申请公布日期 2007.12.25
申请号 US20040931343 申请日期 2004.08.31
申请人 发明人
分类号 H01L27/108;C23C14/08;C23C16/40;C23C16/455;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8242;H01L29/49;H01L29/51;H01L29/76;H01L29/78;H01L29/786;H01L29/94;H01L31/119 主分类号 H01L27/108
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