发明名称 |
Dual damascene interconnect structure with improved electro migration lifetimes |
摘要 |
A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.
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申请公布号 |
US7312532(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20050090107 |
申请日期 |
2005.03.24 |
申请人 |
LSI CORPORATION |
发明人 |
BURKE PETER A.;BARTH WILLIAM K.;LU HONGQIANG |
分类号 |
H01L23/52;H01L21/44;H01L21/4763;H01L21/768;H01L23/48;H01L23/522 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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