METHOD FOR FORMING EMBEDDED BIT LINE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an embedded bit line utilizing a selective non-electrolytic vapor deposition method. SOLUTION: In the method for forming the embedded bit line, a non-electrolytic metal layer is selectively formed in a groove for bit line formed by etching a substrate, and a silicide film is formed inside the groove for bit line by executing a silicide process. COPYRIGHT: (C)2008,JPO&INPIT