| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which the channel length L of a memory cell is reducible and writing can be performed by a voltage lower than the drain breakdown voltage limit of the memory cell, independently of the parasitic resistance in writing. <P>SOLUTION: This nonvolatile semiconductor storage device is equipped with the memory cell MCi, of which the gate terminal is connected to a word line, the drain terminal is connected to a bit line, also the source terminal is connected to a ground, and which can electrically rewrite data; the circuit for supplying writing drain voltage to the drain terminal of the memory cell MCi via the bit line at the writing operation; and the discharge transistor Tr2, of which the one end is connected to the bit line and another end is connected to the ground and which prevents the writing drain voltage from becoming a predetermined value or higher, at writing operation. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
