| 摘要 |
A method of forming metalization in a semiconductor device is provided to prevent overetch of a lower film by forming an insulating layer having no voids, and to form a via and a trench for the metal line without a damage of the lower film. A diffusion barrier layer(12), a first interlayer dielectric(14) and an etch stop layer(16) are formed on a substrate(10), and then are partially etched to form a first via(V1). A nitride layer is formed on the first interlayer dielectric to fill the first via. The nitride layer is etchbacked to form a spacer(20) along a sidewall of the first via. A second interlayer dielectric(18) is formed to fill the first via. The second and first interlayer dielectrics are etched to form a second via(V2) and a trench(T), and then the exposed etching stop layer and the diffusion barrier layer are removed.
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