| 摘要 |
PROBLEM TO BE SOLVED: To promote downsizing of a semiconductor device provided with a power transistor. SOLUTION: A power MOSFETQ is formed on the main surface of an epitaxial layer 2 on the main surface of a semiconductor substrate 1. An n<SP>+</SP>-type source area diffused layer 11 for a source of the power MOSFETQ is electrically connected with a source electrode 24S through a plug 23b. The source electrode 24S is electrically connected with a reach through layer plug PL made of metal. The reach through layer plug PL is formed in a reach through groove 15 which penetrates insulation films 20 and 14, a gate insulation film 4 and the epitaxial layer 2 and reaches the main surface of the semiconductor substrate 1, and it is electrically connected with a p<SP>+</SP>-type diffused layer 16 formed on the semiconductor substrate 1 on the bottom of the reach through groove 15. COPYRIGHT: (C)2008,JPO&INPIT
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