| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has an element separation insulating film of a good characteristic even a groove of a high aspect ratio. SOLUTION: The semiconductor device includes a semiconductor substrate (1) which is formed on the surface and has a groove to divide an element area. A first insulating film (11) having a first density is located in the groove. A second insulating film (12) is located on the first insulating film in the groove, and has a density higher than the first density. A third insulating film (4) composed of a material different from those of the first insulating film or an air gap (31) is formed between the first insulating film and the side of the groove, and reaches at least the interface between the first insulating film and the second insulating film. The groove is filled with the first insulating film and the second insulating film. COPYRIGHT: (C)2008,JPO&INPIT
|
