| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method capable of preventing the depletion of a wiring layer by removing a mask, while maintaining even thickness of an underlying film by preventing the generation of reaction active species of fluorine caused by a by-product due to etching when removing the mask, and reducing subsequent underlying film overetching time. SOLUTION: The plasma treatment method of the present invention has a step of making a gas containing fluorine, which is introduced in a treatment vessel 11, into a plasma and etching halfway in a silicon-containing film 33 in a wafer through a pattern of a mask 34 on the film 33, a step of removing a by-product containing fluorine which is generated by etching and is adhered to a component in the treatment vessel 11, and a step of removing the mask 34 in the treatment vessel 11 after removing the by-product. COPYRIGHT: (C)2008,JPO&INPIT
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