Semiconductor device

摘要

A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.

主权项

1. A semiconductor device, comprising:
a first conductivity type semiconductor substrate; a first region of a second conductivity type semiconductor layer formed on a surface of the semiconductor substrate; a circuit element including a p-n junction formed from the semiconductor substrate and the first region; an input terminal connected to the first region; and a protective element for protecting the circuit element from ESD applied to the input terminal, the protective element including a transistor formed by using the first region as a collector, the semiconductor substrate as a base, and a second region of the second conductivity type semiconductor layer formed in the semiconductor substrate as an emitter, the protective element being formed by connecting the emitter to the semiconductor substrate through a connection region provided in the semiconductor substrate by an electric conductor, whereinthe first region is divided into a plurality of regions, a plurality of the circuit elements using each of the plurality of the first regions are formed, and the second region of the protective element is formed in one piece among the plurality of the first regions.