| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming method suppressing a heat effect on a base material for forming a thin film thereon while improving the film formation property of the thin film. SOLUTION: The thin film forming method is used to form the thin film on the surface of the base material A by a plasma CVD process under ambient pressure. The frequency of an applied voltage for generating plasma in the plasma CVD process is determined to be within a range of 5 to 90 kHz, and the temperature of the base material A upon formation of the thin film is determined to be within a range of 25 to 90°C. COPYRIGHT: (C)2008,JPO&INPIT
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