| 摘要 |
PROBLEM TO BE SOLVED: To measure the temperature of the substrate in real time by measuring the reflectivity of a laser beam having energy near the critical point (hand gap or the like) in a semiconductor device manufacturing device. SOLUTION: The semiconductor device manufacturing device 3 comprises a photodetector 8 for radiating, from an observation window 4, a first laser oscillator 1 having energy near the critical point (band gap or the like) of the substrate 5 and detecting the quantity of light reflected from the substrate 5. The semiconductor device manufacturing device determines the reflectivity from the amount of reflection, compares it with known reflectivity, and measures the temperature of the substrate 5 in real time. Measurement degradation by dirt or the like of an observation window 4 is corrected using a laser beam of wavelength whose reflectivity hardly varies dependently on the temperature of the substrate 5. COPYRIGHT: (C)2008,JPO&INPIT
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