发明名称 |
Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof |
摘要 |
A process and apparatus for a semiconductor device is provided. A device comprises a first transistor having a first charge carrier type. The first transistor comprises a high-k gate dielectric and a first doped electrode. The first charge carrier type comprises one of p-type and n-type and the first doped electrode comprises the other of p-type and n-type. The device further comprises a second transistor having a charge carrier type opposite the first charge carrier type. The second transistor comprises the high-k gate dielectric, and a second doped electrode, wherein the second doped electrode comprises the other of p-type and n-type.
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申请公布号 |
US7279756(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20050185443 |
申请日期 |
2005.07.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIH-HAO;TSAI CHING-WEI;HU CHENMING |
分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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