发明名称 |
METHOD OF FORMING A FUSE STRUCTURE FOR A SEMICONDUCTOR DEVICE |
摘要 |
A method for forming a fuse structure of a semiconductor device is provided to improve reliability and productivity of the device by controlling a thickness of a fuse pattern by forming an etching stop film between a lower insulating film and an upper insulating film. A method for forming a fuse structure for a semiconductor device includes the steps of: forming a lower insulating film(110), an etching stop film(120), and an upper insulating film successively, on a substrate(100) having a cell region and a fuse region; forming an upper insulating film pattern having a first opening by patterning the upper insulating film of the fuse region using the etching stop film; and forming a conductive pattern for filling the first opening. The step of forming a conductive pattern includes the steps of: forming a conductive film on the resultant having the first opening; and forming a fuse pattern(157) with a plug structure burying the first opening, for exposing the upper side of the upper insulating film by planarizing the conductive film.
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申请公布号 |
KR20070097764(A) |
申请公布日期 |
2007.10.05 |
申请号 |
KR20060028430 |
申请日期 |
2006.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, SHANG KYU;KIM, HYUN CHANG;HONG, WEON CHEOL;PARK, KYU SUL;MA, JONG WAN |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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