发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress the occurrence of defects in a resist pattern in immersion exposure in which exposure is carried out through a liquid film in a local region on a substrate. <P>SOLUTION: A resist film is formed on a substrate, subsequently, the substrate on which the resist film is formed is mounted on an exposure apparatus, and a liquid film is selectively formed on a local region on the resist film. When the region on which the liquid film is selectively formed includes an edge part of the resist film on the substrate, the flow direction of the liquid film is controlled so as to be a direction to the edge from a region on which a pattern is transferred. Immersion exposure is carried out in the state where the local liquid film is formed. After the exposure, the resist film on which a latent image is formed is heated. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007258759(A) 申请公布日期 2007.10.04
申请号 JP20070180381 申请日期 2007.07.09
申请人 TOSHIBA CORP 发明人 ITO SHINICHI
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址
您可能感兴趣的专利