| 摘要 |
A hybrid ionized physical vapor deposition technique to form liner films for vias, trenches, and other structures of integrated circuits. The techniques involves depositing liner materials within a via, hole, trench, or other structure in a neutral state, using, for example, physical vapor deposition. The liner materials deposited in this step have an ionization ratio of less than ten percent, and no bias potential is applied to an underlying substrate. The technique also involves depositing liner materials in ionized form in the same via using ionized physical vapor deposition. The liner materials deposited in this step have an ionization ratio far more than ten percent, and an optional bias potential may be applied to the underlying substrate. After liner film is formed, any other suitable actions or processing steps may take place including building additional metallization and dielectric layers and vias or trenches to produce a multi-level interconnect system. |
