| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase-change nonvolatile memory element which can record and erase at a high speed at a low power consumption, and has a good storage reliability. <P>SOLUTION: The phase-change nonvolatile memory element has a phase-change material containing at least Ge, Sb and Sn element as an element structure layer, as a phase-change record layer. A Ge atom in a record layer composition is set to 10 atom% or more. <P>COPYRIGHT: (C)2007,JPO&INPIT |
