| 发明名称 |
III-NITRITE POWER SEMICONDUCTOR DEVICE |
| 摘要 |
A III-nitride power semiconductor device that includes a two dimensional electron gas having a reduced charge region under the gate thereof. |
| 申请公布号 |
WO2007109265(A2) |
申请公布日期 |
2007.09.27 |
| 申请号 |
WO2007US06903 |
申请日期 |
2007.03.20 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION;HERMAN, THOMAS |
发明人 |
HERMAN, THOMAS |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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