Method for forming a stressor structure

摘要

A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor structure is provided which comprises an active semiconductor layer ( 224 ) disposed on a buried dielectric layer ( 222 ). A trench ( 229 ) is created in the semiconductor structure which exposes a portion of the buried dielectric layer. An oxide layer ( 250 ) is formed over the surfaces of the trench, and at least one stressor structure ( 255 ) is formed over the oxide layer.