发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided to test data failure detection precisely by fractionating a tested region, and to test the data failure transferred between a data input pad and a global input/output line by controlling an I/O sense amplifier. A global input/output line transmits data between the outside and a local input/output line(LIO/LIOB). An I/O sense amplifier(IOSA1~IOSA4) controls the data transfer to a global input/output line from the local input/output line. An I/O sense amplifier control part controls the I/O sense amplifier in response to a test mode signal to test a semiconductor memory device regardless of data outputted from a memory cell.
申请公布号 KR100761394(B1) 申请公布日期 2007.09.27
申请号 KR20060059259 申请日期 2006.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KU, YOUNG JUN;SHIN, BEOM JU
分类号 G11C29/00 主分类号 G11C29/00
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