发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device is provided to test data failure detection precisely by fractionating a tested region, and to test the data failure transferred between a data input pad and a global input/output line by controlling an I/O sense amplifier. A global input/output line transmits data between the outside and a local input/output line(LIO/LIOB). An I/O sense amplifier(IOSA1~IOSA4) controls the data transfer to a global input/output line from the local input/output line. An I/O sense amplifier control part controls the I/O sense amplifier in response to a test mode signal to test a semiconductor memory device regardless of data outputted from a memory cell.
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申请公布号 |
KR100761394(B1) |
申请公布日期 |
2007.09.27 |
申请号 |
KR20060059259 |
申请日期 |
2006.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KU, YOUNG JUN;SHIN, BEOM JU |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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