| 摘要 |
A semiconductor device includes: an insulating layer; a semiconductor fin protruding from the insulating layer, extending in a first direction parallel to a major surface of the insulating layer, and having a source region, a channel section, and a drain region arranged in the first direction; a gate electrode opposed at least to a side face of the channel section in the semiconductor fin and extending in a second direction that is substantially orthogonal to the first direction and parallel to the major surface of the insulating layer; an insulating film interposed between the semiconductor fin and the gate electrode; a spacer layer provided on the channel section; a sidewall insulating layer provided adjacent to a side face of the spacer layer substantially parallel to the second direction; and a stress liner. The stress liner covers the sidewall insulating layer and the spacer layer and has an intrinsic stress for distorting the semiconductor fin. The sidewall insulating layer has a thickness of 45 nanometers (nm) or more in the first direction, and the spacer layer has a height of 105 nanometers (nm) or more.
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