| 摘要 |
An integrated semiconductor memory device is provided to reduce current consumption due to a bias current by adjusting the bias current depending on an application where the integrated semiconductor memory device is used. In an integrated semiconductor memory device(100), a programmable storage unit stores a storage state. Receiver circuits(11,21,31) include a first port applying a power supply voltage(VDD), a second port applying a reference voltage(VSS), a third port, a first current path, a second current path and a controllable resistor. The first current path and the second current path of the receiver circuit are connected in parallel between the first port and the third port of the receiver circuit. The controllable resistor of the receiver circuit is connected between the second port and the third port of the receiver circuit. The resistance value of the controllable resistor of the receiver circuit depends on the storage state.
|
