发明名称 |
APPARATUS AND METHODS FOR TWO-DIMENSIONAL ION BEAM PROFILING |
摘要 |
Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.
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申请公布号 |
KR20070084236(A) |
申请公布日期 |
2007.08.24 |
申请号 |
KR20077011018 |
申请日期 |
2005.11.03 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
ANGEL GORDON C.;MACINTOSH EDWARD D.;SCHAEFER THOMAS A. |
分类号 |
H01J37/30;H01J37/302;H01J37/317;H01L21/265 |
主分类号 |
H01J37/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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