发明名称 APPARATUS AND METHODS FOR TWO-DIMENSIONAL ION BEAM PROFILING
摘要 Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.
申请公布号 KR20070084236(A) 申请公布日期 2007.08.24
申请号 KR20077011018 申请日期 2005.11.03
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 ANGEL GORDON C.;MACINTOSH EDWARD D.;SCHAEFER THOMAS A.
分类号 H01J37/30;H01J37/302;H01J37/317;H01L21/265 主分类号 H01J37/30
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