| 摘要 |
<p>A method for fabricating a TFT array substrate is provided to increase a contact area with a photoresist stripper by guaranteeing a broad pattern area not covered with a conductive oxide. A passivation layer is stacked on the entire surface of an insulation substrate having a TFT including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. A photoresist pattern is formed on the passivation layer, including a first region positioned in the TFT region and a second region positioned in a pixel electrode region such that the second region is thinner than the first region. The passivation layer is etched by using the photoresist pattern as an etch mask. The photoresist pattern is etched back to remove the second region in the photoresist pattern. A conductive oxide is vaporized and deposited on the resultant structure. The first region of the photoresist pattern and the conductive oxide deposited on the first region are removed. The process for vaporizing and depositing the conductive oxide includes the following steps. The photoresist pattern further includes a contact hole definition region formed between the first and the second regions. The process for etching the passivation layer includes a process for forming a contact hole in the passivation layer.</p> |
