| 摘要 |
PROBLEM TO BE SOLVED: To indirectly embody a ferroelectric memory which does not destroy a polarization signal, makes access at a high speed by using a difference between polarization signals, is durable to variations in operational environment and in production, and is very reliable. SOLUTION: A polarization signal comparator, which compares two polarization signals in a ferroelectric thin film and replaces the signals with electric signals, is embodied by a combination of an MFSFET and an MOSFET. The ferroelectric memory, which is fast, reliable and stable, is embodied by incorporating the polarization signal comparator into a memory device. COPYRIGHT: (C)2007,JPO&INPIT
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