| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a thin-film transistor (TFT) which can improve reliability. SOLUTION: An n-channel TFT and a p-channel TFT each have a semiconductor layer, a gate insulating film formed so as to contact the semiconductor layer, and a gate electrode, overlapped on the semiconductor layer with the gate insulating film being sandwiched. The gate electrode of the n-channel TFT and that of the p-channel TFT are made of the same conductive layer. The gate electrode of the n-channel TFT has a tapered end, and its angle formed by the surface of a side surface and the surface of a gate insulating film lies within a range of 3-60 degrees. The gate electrode of the p-channel TFT has a tapered end, and its angle formed by the surface of a side surface and the surface of a gate insulating film lies within a range of 70-85 degrees. COPYRIGHT: (C)2007,JPO&INPIT |
