| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration in display quality due to an optical leak current of a thin-film transistor to be used for a display device. SOLUTION: In order to decide a light shielding length L1 of a light-shielding layer 11, a characteristic straight line C1 of the optical leak current I<SB>leak</SB>for an incident optical quantity Qd into a depletion layer DEP is first obtained using a first thin-film transistor for measurement (step A1). Then, a permissible value Qmax of the incident optical quantity Qd corresponding to the permissible value Imax of the optical leak current I<SB>leak</SB>is decided on the basis of the characteristic straight line C1 (step A2). Then, an optical leak current Ii for a light-shielding length L2 is measured using a second thin-film transistor for measurement, and an incident optical quantity Qd corresponding thereto is calculated on the basis of the characteristic straight line C1 (step A3). A characteristic curve C2 of the incident optical quantity Qd for the light-shielding length L2 corresponding to a predetermined light source to be assumed is obtained on the basis of a result of calculation (step A4). Then, the light-shielding length L2 corresponding to the permissible value Qmax of the incident optical quantity Qd is obtained from the characteristic curve C2, and this is used as the light-shielding length L1 (step A5). COPYRIGHT: (C)2007,JPO&INPIT |
