SEALING STRUCTURE, METHOD OF MANUFACTURING SEALING STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent precipitation of impurities on a non-bonding region (light transmissive region) of a glass plate in a process of anodic bonding between a silicon substrate and the glass plate. SOLUTION: In the sealing structure 60 in which the silicon substrate 20 is anodic bonded to the glass plate 40, the upper surface of a wall 26 is bonded to the glass plate 40 to seal the upper part opening of a concave portion 22 in a hermetically state by the glass plate 40. A voltage applying pattern 70 is formed so that an optical conversion element 24 can surround an opposite light-transmissive region. The voltage applying pattern 70 also functions as a cathode pattern contacting the bottom surface of a cathode plate 50 and applied with a voltage. Thus, in the sealing structure 60, impurities contained in the glass plate 40 are precipitated to the cathode side of the glass plate 40 in a bonding region opposite to the voltage applying pattern 70 when a high voltage is applied to the voltage applying pattern 70, but the precipitation of the impurities is prevented in the non-bonding region opposite to the concave portion 22. COPYRIGHT: (C)2007,JPO&INPIT