| 摘要 |
A LED and a method for manufacturing the same are provided to improve current diffusion characteristics by using a stacked structure of N-type chemical compound layers and overdoped N-type chemical compound layers. A LED includes a substrate(10), an N-type semiconductor layer(40,50,60) formed on the substrate, and a P-type semiconductor layer(90) formed on the N-type semiconductor layer. The N-type semiconductor layer includes a stacked structure of N-type chemical compound layers doped with an N-type impurity, and N-type chemical compound layers overdoped with the density higher than the predetermined density. The N-type semiconductor layer or the P-type semiconductor layer is GaN. The N-type impurity is silicon. The stacked structure of 10 to 50 layers is formed by using the N-type chemical compound layers and the overdoped N-type chemical compound layers.
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