发明名称 METHOD AND DEVICE FOR PROCESSING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a processing device capable of efficiently and surely removing a resist provided to a semiconductor wafer. SOLUTION: The processing device comprises a turn table 3 on which a semiconductor wafer is held, and a nozzle 33 which is arranged to face the semiconductor wafer held by the turn table and supplies the substrate with a mixture of sulphuric acid and hydrogen peroxide solution. The nozzle comprises a long body 34 extending in the radial direction of the substrate, first and second liquid supply pipes 37 and 38 which supply the body with sulphuric acid and hydrogen peroxide solution, and first and second slits 41 and 42, as well as a curved surface 39, which mix the sulphuric acid with the hydrogen peroxide solution supplied to the body through the first and second liquid supply pipes and supply it over the entire radial direction of the semiconductor wafer from the body. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007194351(A) 申请公布日期 2007.08.02
申请号 JP20060010027 申请日期 2006.01.18
申请人 SHIBAURA MECHATRONICS CORP 发明人 HIGUCHI KOICHI;KOBAYASHI NOBUO
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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