| 摘要 |
<p>A method for manufacturing a TFT(Thin Film Transistor) array substrate and the TFT substrate using the same are provided to simplify manufacturing processes by omitting three mask processes compared to a conventional method. A buffer layer(11) is formed on a substrate(10). An active layer(13a) of N and P type switch elements is formed on the buffer layer by a first mask process. A gate insulating layer(21) for covering the active layer is formed. A gate electrode of the P type switch element and a storage node common electrode(20) are formed at a predetermined region overlapped with an active layer forming region by using a second mask process. First source and drain regions(13b,13c) of the P type switch element are formed by performing a P+ ion implantation on the active layer of the P type switch element using the gate electrode of the P type switch element as an ion implantation mask. Second source and drain regions of the N type switch element are formed on the resultant structure by a third mask process. An LDD(Lightly Doped Drain) region is formed at both sides of the active region of the N type switch element. An interlayer dielectric and a protection layer are sequentially formed on the resultant structure. A source contact hole and a drain contact hole are formed on the resultant structure by using a fourth mask process. A source electrode, a drain electrode and a storage node electrode(115) are formed on the resultant structure by using a fifth mask process. A pixel electrode and a data protection pattern(126) are then formed on the resultant structure by using a sixth mask process.</p> |
