| 摘要 |
A method for fabricating a capacitor in a semiconductor device includes forming a first insulation layer over a substrate, forming storage node contact plugs in the first insulation layer, contacting predetermined portions of the substrate, forming a second insulation layer over the first insulation layer and the storage node contact plugs, forming trenches exposing the storage node contact plugs, forming storage nodes in the trenches, forming a plasma barrier layer over the second insulation layer and the storage nodes, forming a capping layer over the plasma barrier layer and filled in the trenches, removing the capping layer, the plasma barrier layer, and the second insulation layer, forming a dielectric layer over the storage nodes, and forming a plate electrode over the dielectric layer.
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