| 摘要 |
A method for forming a storage node contact of a semiconductor device is provided to minimize the damage of a bit line hard mask due to an etching process by forming previously a buffer oxide layer on a bit line pattern. A second insulating layer(33) is formed on a first insulating layer(31) with a landing plug contact(32). A bit line pattern composed of a bit line conductive layer and a bit line hard mask sequentially stacked with each other is formed on the second insulating layer. A third insulating layer is formed on the resultant structure until a gap between bit line patterns is completely filled. The third insulating layer is planarized until the bit line pattern is exposed to the outside. A first hole is formed on the resultant structure by performing a first etching process on the second insulating layer. A lateral portion of the contact hole is expanded. A buffer oxide layer(41) is formed on the resultant structure in order to cover the bit line pattern. A second hole for exposing the landing plug contact to the outside is formed on the resultant structure by using a second etching process.
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