COMPOSITION FOR REMOVING POLYMER RESIDUE OF PHOTOSENSITIVE ETCHING-RESISTANT LAYER

摘要

Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80 % by weight of a corrosion inhibitor shown in Formula 1 ; 10 to 80 % by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2 % by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components.