发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS CONTROL METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which memory contents can be held surely in a memory cell even when using power source voltage, also, write-in can be performed surely for the memory cell. <P>SOLUTION: A memory cell M00 including a pair of inverters connected in cross-couple is provided with a first switch part provided between a bit line BL and an output of one side of inverters and a second switch part provided between a bit line XBL and the other side of the inverters. In the first switch part and the second switch part, conduction of switches is controlled respectively to become larger in write-operation than in read operation. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007172715(A) 申请公布日期 2007.07.05
申请号 JP20050367150 申请日期 2005.12.20
申请人 FUJITSU LTD 发明人 OZAWA TAKASHI
分类号 G11C11/412;G11C11/41 主分类号 G11C11/412
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