Annealed wafer and manufacturing method of annealed wafer

摘要

An annealed wafer in which oxygen precipitation is uniform in the substrate plane and a manufacturing method thereof are provided. A nitrogen-doped silicon single crystal substrate pulled at the cooling rate of 4° C./minute or more during crystal growth between 1100 and 1000° C. wherein the nitrogen concentration is 1x10¹⁴ to 5x10¹⁵ atoms/cm³ and V/G satisfies predetermined conditions serves as a substrate, and the substrate is subjected to heat treatment in a non-oxidative atmosphere.