| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of obtaining a high-quality polycrystalline silicon film. SOLUTION: A substrate is carried in at preliminary chambers 101 or 102. Then, the substrate is transferred with a robot arm 109 through processing chambers 103-107. In each of the processing chambers, film forming of an amorphous silicon film and crystallization of the amorphous silicon film are successively executed, and finally, the substrate having a polycrystalline silicon film on its surface can be acquired without being exposed in the ambient air. Temperature control is executed to reduce differences in processing temperature between processes, and thus, the processes from film forming to crystallization can be executed at high throughput. COPYRIGHT: (C)2007,JPO&INPIT
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