| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which increase of chip area can be suppressed even if memory capacity of a memory part for setting initial operation and functions is increased. <P>SOLUTION: The semiconductor memory device is provided with ROM memory cell arrays 20M_0 to 20M_n storing setting information for setting initial operation and functions when a power source is applied, ROM decoders 20D_0 to 20D_n selecting the ROM memory cell array based on the prescribed signal output when the power source is applied, a sense amplifier 19 reading out setting information from the selected ROM memory cell array, latch circuits 21_0 to 21_m storing setting information read out by the sense amplifier 19, and a control circuit setting initial operation and functions according to setting information stored in the latch circuit. And the ROM memory cell arrays 20M_0 to 20M_n has a plurality of word lines and a plurality of bit lines, and constituted of a plurality of memory cells which are arranged at intersections of word lines and bit lines in a matrix state. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
