发明名称 LAYERED OXIDE THERMOELECTRIC MATERIAL HAVING DELAFOSSITE STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To develop p-type and n-type oxide thermoelectric materials being chemically stable at a high temperature and having a dimensionless figure of merit ZT close to 1. <P>SOLUTION: The P-type thermoelectric conversion material is composed of a layered oxide having a delafossite structure shown in general formula CuCr<SB>1-x</SB>Mg<SB>x</SB>O<SB>2</SB>(0.03&le;x&le;0.05). Mg<SP>2+</SP>with an ion radius near that of Cr<SP>3+</SP>is substituted for Cr<SP>3+</SP>of CuCrO<SB>2</SB>and carriers are introduced, and a figure of merit Z (Z=S<SP>2</SP>&sigma;/&kappa;) can be enhanced by improving an electric conductivity &sigma;. The excellent electric conductivity is obtained at the high temperature of 600 to 1,100 K, and a Seebeck coefficient reaches 200 to 350 &mu;V/K. The dimensionless figure of merit ZT exceeds 0.2 at 1,100 K, and the p-type thermoelectric conversion material is available as a high-temperature thermoelectric power-generation material. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007149996(A) 申请公布日期 2007.06.14
申请号 JP20050342933 申请日期 2005.11.28
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 ONO YASUHIRO;SATO KENICHI;KAJITANI TAKESHI
分类号 H01L35/22;C04B35/45;H01L35/34 主分类号 H01L35/22
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