A DISTRIBUTED BRAGG REFLECTOR(DBR) IN VERTICAL CAVITY SURFACE EMITTING LASER(VCSEL) DIODE AND A MANUFACTURING METHOD THEREOF AND A VCSEL DIODE

摘要

A DBR(Distributed Bragg Reflector) in a vertical cavity surface emitting laser diode and a manufacturing method thereof and a vertical cavity surface emitting laser diode are provided to improve a surface state of the DBR by reducing a laminating thickness of an InAlAs layer, thereby improving a reflection factor. A DBR in a vertical cavity surface emitting laser diode(300) includes an InP substrate(310). A plurality of InAlGaAs/InAlAs DBR layers are laminated on the InP substrate(310) and composed of an InAlGaAs layer(321,341) and an InAlAs layer(322,342) having a lower reflection factor than the InAlGaAs layer(321,341). An InAlGaAs/InP DBR layer composed of the InAlGaAs layer(321,341) and an InP layer(343) is inserted whenever a predetermined number of InAlGaAs/InAlAs DBR layers are laminated.