| 摘要 |
PROBLEM TO BE SOLVED: To provide a metallization polyimide film excellent in the adhesion of copper foil and a substrate, insulation reliability, and migration resistance, and is adapted to practical use as a substrate of a highly reliable COF, TAB, an FPC, a semiconductor package, or the like. SOLUTION: In a metallization polyimide film formed by laminating (1) a first metal layer not containing Cu, and (2) a second metal layer principally comprising Cu sequentially on at least one side of a polyimide film, the amount of residual metal other than Cu on the surface of the polyimide film treated with a sulphuric acid/hydrogen peroxide based etching reagent after the metallization polyimide film is heat-treated at 150°C is 1μg/cm<SP>2</SP>or less. COPYRIGHT: (C)2007,JPO&INPIT |
